Development of Electro-Absorption Modulator Driver ICs for 25G/40G Transmission
نویسندگان
چکیده
As Internet traffic increases, large communication capacity is required in optical communication systems. For the client side of DWDM *1 (dense wavelength division multiplexing) systems, the baud rate of current optical communication is mainly 10 Gbit/s, which has already been used in 10G Ethernet. However, these systems will be insufficient for the accelerated traffic increase expected in the next few years. Therefore, a 100G Ethernet system using the LAN-WDM (1) technique has been standardized by the IEEE (Institute of Electrical and Electronics Engineers). In this standard, 4-lane wavelength division multiplex with 800 GHz spacing from 1296 to 1309 nm is employed. In addition, as part of the OTN (optical transport network) standardization, OTU4 (optical-channel transport unit 4; 112 Gbit/s), which is more compatible with 100G Ethernet, was proposed in ITU-T (International Telecommunication Union Telecommunication Standardization Sector. The baud rate of the 100G Ethernet system and OTU4 are 25 Gbit/s and 28 Gbit/s, respectively. On the other hand, STM-256, a well-known standard of ITUT, has a baud rate of 39.8 Gbit/s. In addition, demand is increasing for OTU3 (43.0 Gbit/s), a new standard compliant with 40G Ethernet. In the latest system, low power dissipation is essential. More particularly, CFP (centum gigabit form factor pluggable)*2 (2) a widely-used MSA (MultiSource Agreement) transceiver, requires to have low power consumption and fit in a small outline package for optical transmitter modules. We have already developed an optical transmitter module and a driver IC for high-speed optical communication systems up to 10 Gbit/s. As for 40G and 25G transmitters, electro-absorption modulators integrated with DFB laser (EA-DFB*3) are suitable for high-optical transmitter sources. In this paper, we outline newly developed EA modulator driver ICs for both 25G and 40G transmission. These ICs have low power dissipation and high-speed drivability, and are fabricated by an in-house InP D-HBT process (ft/fmax = 150/250 GHz). To minimize power dissipation for each bit rate, the circuit topology was optimized. These ICs have a built-in optical transmitter module to provide the best performance. This paper describes an overview of EA modulator driver ICs and their evaluation results. The performances of the optical transmitter modules, compliant with SDH, OTN and 100G Ethernet standards, are also reported.
منابع مشابه
Gbit / s Lithium Niobate Modulator
As 10 Gbit/s long-distance optical communication systems become more and more pervasive, requirements rise relating to increased levels of performance, as well as the miniaturization of key devices that configure such systems. Lithium niobate (LN) modulators are used primarily as optical modulators that change high-speed electrical signals at 10 Gbit/s to optical signals for long-distance commu...
متن کامل18 English
High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...
متن کاملInvestigation of Effect of Accumulation Layer Thickness of ENZ material on Electro-Absorption Modulator
In this paper, the performance of an optical modulator based on indium tin oxide is investigated at telecommunication wavelength for different accumulation thickness. The plan of metal-oxide-semiconductor is utilized to change the carrier concentration at indium tin oxide-hafnium oxide interface. An optical mode solver based finite element method has been used to calculate the basic parameters ...
متن کاملRecent Developments of Low Driving Voltage And High Modulation Efficiency Electro-Absorption Modulators (Eams)
Electro-absorption (EA) modulators are very attractive devices for optical fiber communications because of their very low driving voltage, very high modulation efficiency and integratibility with lasers. However, conventional EA modulators are lumped electrode devices, whose speeds are limited by the total parasitics of the devices, which restricts the devices to very short length for high spee...
متن کاملRecent Developments and Signal Processing of Low Driving Voltage and High Modulation Efficiency Electro-absorption Modulators (EAMs)
Electro-absorption (EA) modulators are very attractive devices for optical fiber communications because of their very low driving voltage, very high modulation efficiency and integratibility with lasers. However, conventional EA modulators are lumped electrode devices, whose speeds are limited by the total parasitics of the devices, which restricts the devices to very short length for high spee...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012